1 dual p-channel 30-v (d-s) mosfet features ? halogen-free acc or ding to iec 61249-2-21 definition ? trenchfet ? power mosfets ? compliant to rohs directive 2002/95/ec p roduct summary v ds (v) r ds(on) ( )i d (a ) - 30 0.053 at v gs = - 10 v - 4.9 0.090 at v gs = - 4.5 v - 3.7 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 t op v ie w 2 3 4 1 s 1 g 1 d 1 p-channel mosfet s 2 g 2 d 2 p-channel mosfet notes: a. surface mounted on 1" x 1" fr4 board. absolute maximum ratings t a = 25 c , unless otherwise noted parameter symbol 10 s s teady state unit drain-source voltage v ds - 30 v gat e-source vo ltage v gs 20 contin uous drain current (t j = 150 c) a t a = 25 c i d - 4.9 - 3.7 a t a = 70 c - 3.9 - 2.9 pulsed drain cu rrent i dm - 30 contin uous sou rce current (diode conduction) a i s - 1.7 - 0.9 maximu m power dissipation a t a = 25 c p d 2. 0 1.1 w t a = 70 c 1. 3 0.7 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance rati ngs p aramete r symbol typical maximum unit maximum junction-to-ambient a t 10 s r thj a 52 62.5 c/w stead y state 90 110 maximum junction-to-foot (d rain) steady state r thjf 32 40 www.din-tek.jp DTM4953A
2 no tes : a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. st resses be yond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. ty pical chara cteristics 25 c, unless otherwise noted s pecifications t j = 25 c, unless otherwise noted p arameter symbol test conditions min. typ. max. unit static gate t hreshold vo ltage v gs(t h) v ds = v gs , i d = - 250 a - 1 v gate-b o dy lea kage i gss v ds = 0 v , v gs = 20 v 100 na z ero gate voltage drain current i dss v ds = - 30 v , v gs = 0 v - 1 a v ds = - 30 v, v gs = 0 v , t j = 55 c - 25 on-state drain current a i d( on) v ds = - 5 v , v gs = - 10 v - 30 a drain-source on-state re sista nce a r ds( on) v gs = - 10 v , i d = - 4.9 a 0.045 0.053 v gs = - 4.5 v , i d = - 3.7 a 0.075 0.090 forward t ransconductance a g fs v ds = - 10 v, i d = - 4.9 a 9s diode forw ard voltage a v sd i s = - 1.7 a, v gs = 0 v - 0.8 - 1.2 v dy namic b t otal gate charge q g v ds = - 15 v , v gs = - 10 v , i d = - 4 .9 a 15 25 nc gate-sou rce charge q gs 4 gate- drain charge q gd 2 tu r n - o n d e l ay t i m e t d( on) v dd = - 15 v, r l = 15 i d ? - 1 a, v ge n = - 10 v , r g = 6 71 5 ns rise time t r 10 20 turn -off delay time t d( off) 40 80 fall time t f 20 40 source-drain re verse recovery time t rr i f = - 1.7 a, di/ dt = 100 a/s 30 60 outpu t characteristics 0 6 12 18 24 30 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs = 10 v thru 7 v 4 v v ds - drain-to-source voltage - drain current (a) i d 3 v 5 v 6 v t ransfer characteristics 0 6 12 18 24 30 0123456 t c = - 55 c 125 c 25 c v gs - gate-to-source voltage - dr ain current (a) i d www.din-tek.jp DTM4953A
3 typica l c har ac teri stic s 25 c, unless otherwise noted on -resistance vs. drain current gate charge source-drain diode forward voltage - on-resistance ( ) r ds(on) 0 0.05 0.10 0.15 0.20 0 6 12 18 24 30 i d - drain current (a) v gs = 10 v v gs = 4.5 v 0 2 4 6 8 10 0 4 8 12 16 20 v ds = 15 v i d = 4.9 a - gate-to-source voltage (v) q g - t otal gate charge (nc) v gs 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 30 10 1 v sd - source-to-dr ain voltage (v) - source current (a) i s t j = 25 c t j = 150 c cap acitance on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage 0 300 600 900 1200 1500 0 6 12 18 24 30 v ds - drain-to-source voltage (v) c rss c os s c is s c - capacitance (pf) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v i d = 4.9 a t j - j unction temperature (c) (nor malized) - on-resistance r ds(on) 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 02468 10 i d = 4.9 a - on -resistance () r ds(on ) v gs - gate-to -source voltage (v) www.din-tek.jp DTM4953A
4 ty pi cal ch ara cteristics 25 c , un less otherwise noted t hreshold voltage - 0.4 - 0.2 0.0 0.2 0.4 0.6 0.8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v ariance (v) v gs(th) t j - t emper ature (c) sing le pulse po wer 0 30 50 10 20 power (w) t ime (s) 40 1 100 600 10 10 -1 10 -2 10 -3 no r m alized t h erma l trans ient impe dan ce, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wa ve pulse duration (s) nor malized eff ective transient thermal impedance 1. duty cycle, d = 2. p er unit base = r thj a = 90 c/w 3. t jm - t a = p dm z thj a (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm no rmalized therm al transient impedance, junction-to-foot 10 -3 10 -2 11 0 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized ef fective transient thermal impedance www.din-tek.jp DTM4953A
1 di m millimeter s inc hes min ma x min max a 1 .35 1.7 5 0.053 0.069 a 1 0 .10 0.2 0 0.004 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0 8 0 8 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all lea d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (ga ge pla ne) soic (narrow): 8-lead jedec p a rt n u m b er: ms -012 s package information www.din-tek.jp
1 appl ication note r ecommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.71 1) 0.050 (1.270) 0.022 (0.559) return to index r eturn to inde x application note www.din-tek.jp
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